PDF) Ion implantation and annealing studies in III-V nitrides | Robert Karlicek, Jr. - Academia.edu
PDF) Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
a Room-temperature PL spectrum and SEM image (inset) of a... | Download Scientific Diagram
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
PDF) NEW APPLICATIONS FOR ION IMPLANTATION: LIFE IN A VERTICAL CMOS WORLD, MATERIALS MODIFICATION and DEEP PROTON IMPLANTS | Michael Current - Academia.edu
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Silicon implantation for gallium nitride light-emitting diodes
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces
Low-energy Se ion implantation in MoS2 monolayers | npj 2D Materials and Applications
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing: Journal of Applied Physics: Vol 132, No 13
Implantation damage formation in a-, c- and m-plane GaN - ScienceDirect
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer - ScienceDirect
1: Process flow for ion implanted CAVETs with no regrowth. (a)... | Download Scientific Diagram
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Boron Doping in Next-Generation Materials for Semiconductor Device | IntechOpen
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
The Mechanistic Determination of Doping Contrast from Fermi Level Pinned Surfaces in the Scanning Electron Microscope Using Energy-Filtered Imaging and Calculated Potential Distributions | Microscopy and Microanalysis | Cambridge Core
